Improved frequency comb operation of an InAs/GaAs hybrid multisection quantum dot laser on silicon

This work reports on a systematic investigation of the frequency comb enhancement in hybrid InAs/GaAs multisection quantum dot lasers silicon. The colliding configuration provides an operating at twice fundamental free-spectral range cold cavity. In particular, contribution linewidth factor, or αH-factor, formation is investigated with respect to reverse voltage and temperature conditions. When those parameters are varied, combs found increase αH. addition, we also demonstrate that this laser exhibits behavior, while beatnote locking not fully achieved. effect essentially due dispersion which compensated from optical nonlinearities. These results bring further insights pulse formations lasers, important for designing future light sources on-chip chip-to-chip interconnects.